Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs
説明
By controlling the crystallization in Hf-silicate gate dielectrics, we directly observed that the crystallized-HfO/sub 2/ portions in Hf-silicate degrade the electron mobility in Hf-silicate gate MISFETs. The degradation is proportional to the amount of crystallized portions in the Hf-silicate, which induce Coulomb scattering, in addition to substrate impurity scattering. Furthermore, we quantitatively investigated the contributions of the additional scattering to the electron mobility in Hf-silicate gate MISFETs.
収録刊行物
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- Digest. International Electron Devices Meeting,
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Digest. International Electron Devices Meeting, 621-624, 2003-06-25
IEEE