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Fabrication of μc-3C-SiC/c-Si Heterojunction Solar Cell by Hot Wire CVD System
Description
N-type microcrystalline 3C-SiC: H films are deposited by Hot Wire Chemical Vapor Deposition (HWCVD) at a low substrate temperature (~ 300°C). Heterojunction silicon based photovoltaic devices are fabricated by depositing wide band gap n-type μc-3C-SiC thin films on p-type Si wafer, whose thickness and resistivity are 200μm and 1-10 ?-cm respectively. The silicon wafers were textured by alkaline etchent prior to the device fabrication. The photovoltaic parameters of a typical device are found to be Voc = 560 mV, Jsc = 35.0 mA/cm2, F.F. = 0.724, ? = 14.20%. Numerical analysis has been performed by using AFORS-HET, one dimensional device simulator to find out the probable cause of the change in device parameters before and after ageing of the filament.
Journal
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- 2006 IEEE 4th World Conference on Photovoltaic Energy Conference
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2006 IEEE 4th World Conference on Photovoltaic Energy Conference 1334-1337, 2006-05-01
IEEE