説明
In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both $\boldsymbol{V}\mathbf{ce}$ and turn-off loss reduction, 35% improvement in $\boldsymbol{E}\mathbf{off}$ vs $\boldsymbol{V}\mathbf{cesat}$ relationship was achieved.
収録刊行物
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- 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) 43-46, 2019-05
IEEE
