Growth of ZnSe and ZnSSe at Low Temperature with Aid of Atomic Hydrogen and Alternate Gas Supply
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説明
<jats:title>ABSTRACT</jats:title><jats:p>High quality ZnSe films were successfully grown on GaAs(100) at low temperatures, 200 °C or lower by Hydrogen Radical-enhanced Chemical Vapor Deposition (HRCVD). Defects were makedly eliminated by the following factors: selection of source materials; avoidance of ion bombardment; and suppression of formation of adducts by alternate gas supply. Strained-layer superlattice (SLS) consisting of ZnSe as the well and ZnS<jats:sub>0. 1</jats:sub>Se<jats:sub>0.9</jats:sub> as the barrier was made by this technique. Emission line attributed to the free exciton was dominantly observed in the SLS.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 222 1991-01-01
Springer Science and Business Media LLC
