Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayer

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Abstract The initial growth process of GaAs on Ge and Si was investigated relating to the segregation of Ge and Si atoms in the hetero-systems with small lattice mismatch and no anti-phase domain. It was clarified that the initial growth process is distorted by the segregation of Ge and Si, changing the surface reconstruction. The segregated atoms disturb the surface migration of Ga. It was estimated that little segregation of Ge atoms appears even in the AlAs initial layer, which effectively suppresses the segregation.

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