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EL emission from TlIDGaAs/GaAs quantum well LEDs and LDs
Description
We have fabricated the TlInGaAs quantum well structures on GaAs(100) substrates and demonstrated the electroluminescence (EL) emission up to 300K. Compared with the InGaAs quantum well reference samples, we confirmed that the temperature-variation of EL peak energy was decreased by the addition of Tl into InGaAs. We also demonstrated the pulsed current injection laser oscillation for the TlInGaAs/GaAs double quantum wells laser diodes with InGaP layers as cladding layers.
Journal
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- International Conference on Indium Phosphide and Related Materials, 2005.
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International Conference on Indium Phosphide and Related Materials, 2005. 227-230, 2005-10-24
IEEE
