Luminescence study on GaInP doped with Er by OMVPE
説明
Er-related photoluminescence due to intra-4f shell transitions of Er/sup 3+/ ions has successfully been observed in GaInP doped with Er by OMVPE. In GaInP grown on GaP and InP, the luminescence intensity increased gradually with increasing Ga composition, while the spectral shape was invariant. In GaInP grown on GaAs, the luminescence spectrum was dominated by three emission lines whose relative intensity depended on the Ga composition. Thermal quenching of the Er-related luminescence became gradually small with increasing Ga composition, i.e., increasing band gap, which reflects deep-level properties of Er in excitation mechanism of the 4f shell.
収録刊行物
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- Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
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Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) 603-606, 2002-11-27
IEEE
