Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts
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<jats:title>ABSTRACT</jats:title><jats:p>We have investigated electronic deep levels in free-standing <jats:italic>n</jats:italic>-GaN substrates grown by hydride vapor phase epitaxy (HVPE), by means of a steady-state photo-capacitance spectroscopy technique, using transparent conductive polyaniline Schottky contacts. Two specific deep levels located at ~1.7 and ~3.1 eV below the conduction band were revealed to be significantly reduced compared to those in <jats:italic>n</jats:italic>-GaN layers grown by metal-organic chemical vapor deposition. This difference between them is probably due to extremely low concentrations of threading dislocations and residual C impurities in the HVPE-grown <jats:italic>n</jats:italic>-GaN substrates.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 1309 2011-01-01
Springer Science and Business Media LLC