Synthesis of Aligned ZnO Hexagonal Nanorods and Its Application to ZnS Based DC Electroluminescent Devices
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Highly oriented ZnO nanorods have been grown on p<jats:sup>-</jats:sup>-Si(111) wafers using a low-pressure thermal CVD method. X-ray diffraction shows that the nanorods are grown with the c-axis normal to the substrate. An electroluminescent device with ITO/ZnS:Mn/nanorod-ZnO/p<jats:sup>-</jats:sup>-Si structure where the ZnS:Mn and ITO layers are deposited by the electron beam deposition method on the ZnO nanorods layer operates stably in DC mode with high luminance.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 799 2003-01-01
Springer Science and Business Media LLC