Synthesis of Aligned ZnO Hexagonal Nanorods and Its Application to ZnS Based DC Electroluminescent Devices

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説明

<jats:title>ABSTRACT</jats:title><jats:p>Highly oriented ZnO nanorods have been grown on p<jats:sup>-</jats:sup>-Si(111) wafers using a low-pressure thermal CVD method. X-ray diffraction shows that the nanorods are grown with the c-axis normal to the substrate. An electroluminescent device with ITO/ZnS:Mn/nanorod-ZnO/p<jats:sup>-</jats:sup>-Si structure where the ZnS:Mn and ITO layers are deposited by the electron beam deposition method on the ZnO nanorods layer operates stably in DC mode with high luminance.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 799 2003-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1872272492586203392
  • DOI
    10.1557/proc-799-z5.38
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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