Focused 0.5 MeV Ion Beam Line with Low Aberration Quadrupole Magnets
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説明
<jats:title>ABSTRACT</jats:title><jats:p>A microbeam line with precisely designed quadrupole magnets has been developed and installed at the Research Center for Extreme Materials, Osaka University. For the purpose of applying the beam line to microbeam RBS/channeling, the damage in <100>Si due to the irradiation of probe beams was studied as a function of incident ion dose from 10<jats:sup>15</jats:sup> to 10<jats:sup>18</jats:sup> /cm<jats:sup>2</jats:sup> with a flux of 8 × 10<jats:sup>4</jats:sup> nA/cm<jats:sup>2</jats:sup>. It was found that the dose for channeling measurements should be less than several 10<jats:sup>17</jats:sup> /cm<jats:sup>2</jats:sup>.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 157 1989-01-01
Springer Science and Business Media LLC