High performance digital-analog mixed device on an Si substrate with resistivity beyond 1 kΩ cm

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High performance digital-analog mixed devices are fabricated on a high resistivity MCZ Si substrate with low oxygen in order to suppress substrate noise from digital to analog circuits. The low oxygen prevents substrate resistivity reduction due to thermal donor occurring during device fabrication process. Good characteristics of digital, analog and power amplifiers can be realized by optimizing the process of oxynitride, halo implantation and salicide. In 0.11 /spl mu/m CMOS, high drivability, that is, 770 /spl mu/A//spl mu/m for NMOS and 330 /spl mu/A//spl mu/m for PMOS was achieved at Ioff=10/sup -9/ A//spl mu/m. And fT value of 90 GHz for NMOS and 48 GHz for PMOS can be achieved. Additionally, high efficiency of 68% at 2 GHz operation can be realized in power amplifier with 0.30 /spl mu/m gate length.

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