Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's
説明
A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.
収録刊行物
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- GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 151-154, 2002-12-24
IEEE
