Polarized XAFS study of Al<i>K</i>-edge for<i>m</i>-plane AlGaN films
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説明
Local structures around Al atoms in high-quality m-plane AlxGa1-xN films (x=0.32 and 0.58) deposited on m-plane GaN substrates by the NH3 source molecular beam epitaxy method were investigated by Al K-edge X-ray absorption fine structure (XAFS) for the first time. XAFS spectra were measured using a linearly-polarized X-ray source from synchrotron radiation for three different directions; along the c-, a-, and m-axes. The interatomic distances along the a-axis are close to Ga-Ga distance in GaN, indicating that the local structures are strongly affected by GaN substrates. The localization of Al atoms was observed for the Al0.32Ga0.68N film.
収録刊行物
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- Journal of Physics: Conference Series
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Journal of Physics: Conference Series 502 012031-, 2014-04-10
IOP Publishing
