Guideline for Low-temperature-operation Technique to Extend CMOS Scaling
説明
Low temperature device operation at 240 - 300 K temperature range is a promising approach to extend the device technology. The guideline of device design for Cooling CMOS and the optimum operation temperature considering total power consumption is discussed for the first time. Also, the compatibility of Cooling CMOS with advanced high-k gate dielectrics and embedded SiGe S/D technique are clarified.
収録刊行物
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- 2006 International Electron Devices Meeting
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2006 International Electron Devices Meeting 1-4, 2006-01-01
IEEE
