Magneto-optics in Be-δ-doped GaAs quantum wells with a back gate
この論文をさがす
説明
The photoluminescence spectra from a Be‐δ‐doped GaAs/AlGaAs quantum well with a back‐gate were measured in magnetic fields. The electron density is controlled from 1 × 109 to 2.5 × 1011 cm−2 with the back‐gate bias. The photoluminescence intensity increases linearly and the Landau‐level peaks appear as the electron density increases. This measurement indicates that the electron density can be controlled homogeneously with the back gate in the sample as large as 1mm2. The photoluminescence measurement in our sample is especially advantageous in studying the properties of two‐dimensional electron systems in the dilute electron density regime.
収録刊行物
-
- AIP Conference Proceedings
-
AIP Conference Proceedings 772 397-398, 2005-01-01
AIP