Impact of electron rebound from drain on drive current in nano-scale InGaAs MOSFETs
説明
We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, L g , of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate at the bottleneck. Consequently the average electron velocity at the bottleneck, v s , decreases. This considerably diminishes the potential of the InGaAs MOSFETs for the current drivability.
収録刊行物
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- 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 1350-1352, 2010-11-01
IEEE