Internal electric field effects at ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerface investigated by photoreflectance spectroscopy
説明
We performed photoreflectance (PR) and Raman-scattering measurements of long-range ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerfaces to investigate effects of the internal electric field on the carrier-modulation mechanism. The PR spectrum of an ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerface shows the Franz-Keldysh oscillation due to a strong internal electric field. However, the PR-signal amplitude for the ordered sample is /spl sim/1/20 of that for a disordered sample. Raman-scattering results of the ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerfaces reveal plasmon-phonon coupled modes due to the spontaneous electron accumulation. We suggest that the electron accumulation reduces the mean electric field for the PR modulation.
収録刊行物
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- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) 330-333, 2002-11-13
IEEE