Electroluminescence of InGaAsSbN quantum well diodes grown on InP substrates
説明
InGaAsSbN quantum well diodes operating at 2 /spl mu/m wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their electroluminescence (EL) properties were studied. The emission wavelength of the EL was 2.15 /spl mu/m for the quantum well diode without nitrogen, while the emission wavelength was as long as 2.43 /spl mu/m for the quantum well diode with 1.4% nitrogen at room temperature. It was found that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.
収録刊行物
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- 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.
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16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. 643-646, 2005-07-13
IEEE