Critical Temperature Switch: A Highly Sensitive Thermosensing Device Consisting of Subthreshold MOSFET Circuits
説明
A thermosensing circuit that changes its internal state steeply at a critical temperature is proposed. The device makes use of the transition of a MOSFET resistor from strong-inversion operation to weak-inversion or subthreshold operation. The temperature for the transition can be set to a desired value by adjusting the parameters of MOSFETs in the device. The device can be made with a standard CMOS process and can be used as over-temperature and over-current protectors for LSI circuits.
収録刊行物
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- 2006 International Symposium on Intelligent Signal Processing and Communications
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2006 International Symposium on Intelligent Signal Processing and Communications 111-114, 2006-12-01
IEEE