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Gain Coupled 4×25 Gb/s EML Array Based on Identical Epitaxial Layer Scheme
Description
Gain-coupled 4 ×25 Gb/s EML array is implemented by identical epitaxial layer integration scheme. The device exhibits excellent single-mode performance, high extinction ratio, and a modulation bandwidth over 28 GHz, making it suitable for 100GbE applications.
Journal
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- 2018 IEEE International Semiconductor Laser Conference (ISLC)
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2018 IEEE International Semiconductor Laser Conference (ISLC) 1-2, 2018-09-01
IEEE
