Impact of the LAD process on CIGS thin films and solar cells
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説明
We have developed a Laser-Assisted Deposition (LAD) process for improving the crystalline quality of CIGS thin films and cell performance. The V OC , FF and conversion efficiency improved by the LAD process for all CIGS devices with different Ga content. In particular the V oc improved remarkably for low Ga-content CIGS devices. In fact a high efficiency low-Ga CIGS thin film solar cell was achieved at substrate temperatures of 430 °C. The details of laser power and photon energy dependences of cell performance are also presented.
収録刊行物
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- 2008 33rd IEEE Photovolatic Specialists Conference
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2008 33rd IEEE Photovolatic Specialists Conference 1-4, 2008-05-01
IEEE