Material analysis of GeSn/SiGeSn quantum wells based on many-body theory
説明
Material characteristics (optical gain/absorption, refractive index change) of GeSn/SiGeSn quantum wells in mid-IR region is theoretically investigated based on many-body theory. The strategies for designing quantum wells having large material gain or absorption under applied electric field are discussed.
収録刊行物
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- 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)
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2017 IEEE Photonics Society Summer Topical Meeting Series (SUM) 79-80, 2017-07-01
IEEE
