ELO bonding of GaAs devices on diamond film SAW devices
説明
This paper reports a basic study on the integration of diamond film with GaAs devices. We investigated the roughness of the diamond film surface by AFM and estimated the thermal conductivity of the diamond film by acoustic-optical measurement technology. We also bonded GaAs devices such as Schottky junctions and MSM diodes on the diamond film using improved epitaxial liftoff technology, in which a polyimide film is used in place of black wax. These results confirm the possibility of fabricating SAW-semiconductor functional devices on the diamond film.
収録刊行物
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- 1998 IEEE Ultrasonics Symposium. Proceedings (Cat. No. 98CH36102)
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1998 IEEE Ultrasonics Symposium. Proceedings (Cat. No. 98CH36102) 1 327-330, 2002-11-28
IEEE