Conductance Quantisation In An Induced Hole Quantum Wire

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説明

We have fabricated and studied a ballistic one‐dimensional p‐type quantum wire using an undoped AlGaAs/GaAs structure. The absence of modulation doping eliminates long‐range disorder potential scattering and allows high carrier mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier‐carrier interactions are strongest. The device exhibits clear quantised conductance plateaus with highly stable gate characteristics.

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詳細情報 詳細情報について

  • CRID
    1872553967329719168
  • DOI
    10.1063/1.2730073
  • ISSN
    0094243X
  • データソース種別
    • OpenAIRE

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