Conductance Quantisation In An Induced Hole Quantum Wire
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説明
We have fabricated and studied a ballistic one‐dimensional p‐type quantum wire using an undoped AlGaAs/GaAs structure. The absence of modulation doping eliminates long‐range disorder potential scattering and allows high carrier mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier‐carrier interactions are strongest. The device exhibits clear quantised conductance plateaus with highly stable gate characteristics.
収録刊行物
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- AIP Conference Proceedings
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AIP Conference Proceedings 893 681-682, 2007-01-01
AIP