Stabilization of Porous Silicon Electroluminescence by Surface Capping With Silicon Dioxide Films
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<jats:title>Abstract</jats:title><jats:p>To prolong the operation life of electroluminescence (EL) from porous silicon (PS) diodes without affect on the efficiency, the surface passivation technique is applied to the active PS layer. By combining a postanodization electrochemical oxidation (ECO) technique for the PS layer with a surface capping by SiO<jats:sub>2</jats:sub> films sputtered using electron cyclotron resonance (ECR) method, the degradation of the EL efficiency is effectively suppressed for a long time over several hours under a cw operation. It is shown that from thermal desorption spectra analyses, the capability of capped films as a barrier against penetration of water molecules is a key factor for stabilizing the EL operation due to preventing luminescent PS layers from current-induced oxidation.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 638 2000-01-01
Springer Science and Business Media LLC