Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers
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説明
<jats:title>ABSTRACT</jats:title><jats:p>The structure of porous silicon exhibiting efficient visible photoluminescence has been characterized by using Fourier transformed infrared absorption, Raman scattering and x-ray diffraction. It is shown that the lattice spacing in the porous Si layer expands by about 0.3% in the direction perpendicular to the surface and also a partially disordered structure is existing. Electron beam irradiation causes desorption of hydrogen and fluorine bonds which terminate the surface, resulting in the quenching of the visible luminescence. The chemical etching of such layer has led to complete recovery of the luminescence intensity as well as the hydrogen and fluorine bonds termination.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 256 1991-01-01
Springer Science and Business Media LLC