Dielectric and optical properties of epitaxial rare-earth scandate films and their crystallization behavior
説明
<jats:p>Rare-earth scandates (ReScO3, with Re=Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, i.e., the entire series for which the individual oxides are chemically stable in contact with Si) were deposited in a temperature-gradient pulsed laser deposition system onto LaAlO3 substrates. The crystallization temperature depends monotonically on the Re atomic number and the Goldschmidt tolerance factor, with crystallization temperatures as low as 650°C for LaScO3 and PrScO3. The dielectric constants of the crystalline films K≈30 (determined by microwave microscopy) are significantly larger than those of their amorphous counterparts. In combination with the large observed band gaps (Eg>5.5eV, determined by ellipsometry), these results indicate the potential of these materials as high-K dielectrics for field-effect transistor applications.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 88 2006-06-26
AIP Publishing
