Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
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説明
We present a study of semi-polar (1-101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 7939 79391X-, 2011-02-10
SPIE
