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Photo-induced refractive-index change of semiconductor
Description
The study aims to develop infrared devices by utilizing the photo-induced refractive-index change of semiconductor. When the semiconductor plate is exposed to a laser beam with sufficient photon energy, both the absorption coefficient and the refractive index change due to the plasma absorption by excited free carriers. This phenomenon can be used for switching, modulation, or wavelength selection of the infrared beam.
Journal
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- 2003 European Quantum Electronics Conference. EQEC 2003 (IEEE Cat No.03TH8665)
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2003 European Quantum Electronics Conference. EQEC 2003 (IEEE Cat No.03TH8665) 226-, 2004-10-19
IEEE
