Effect on voltage dividing class E amplifier by parasitic capacitances of drive circuit

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説明

This paper considers influence of voltage dividing class E amplifier by parasitic capacitances of diode of connected to drive circuit. Voltage dividing class E amplifier can accommodate problem of class E amplifier because it is possible to divide peak switch voltage by connecting transistors in series. In this circuit, the source of transistor can't be connected to ground by connecting transistors in series. This problem is addressed by connecting a resistor and two diodes to each gate part of transistor. Namely, parasitic capacitances of diode have an influence on shunt capacitance. However, previous analyses didn't consider the existence of parasitic capacitances of diode of connected to the drive circuit. In this paper, influence of parasitic capacitances of drive circuit are taken into consideration for a design. This paper derives the design formula of the shunt capacitance including the parasitic capacitances. With this design formula, nominal operating circuit can be designed properly at the high operating frequency where a ZVS operation could not be achieved due to the parasitic capacitance.

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