Effect of doping of Li-complex on charge injection and transport in tris(8-quinolato) aluminum layer

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説明

Thin buffer layers composed of tris(8-quinolato) aluminum (Alq) layer doped with Li-acetylacetonate (Li-acac), Mg-acac and magnesium metal were inserted between an MgAg cathode and an Alq electron transport layer in standard double-layer devices with the ITO/TPD/Alq/MgAg structure. The insertion of the buffer layers with Li-acac brought about large decrease in drive voltage. While the effects of Mg-acac and magnesium metal were smaller than the case of Li-acac. Electron drift mobility of Alq layers doped with Li-acac and magnesium metal was evaluated by using a time-of-flight method. Large increases of electron mobility as well as the increase of dark conductivity with doping were found.

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詳細情報 詳細情報について

  • CRID
    1872553967785684480
  • DOI
    10.1117/12.416889
  • ISSN
    0277786X
  • データソース種別
    • OpenAIRE

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