Excellent process control technology for highly manufacturable and high performance 0.18 μm CMOS LSIs
説明
Summary form only given. Highly manufacturable and high performance 0.18 /spl mu/m CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics. A new Ti salicide technology which was fine line effect free down to 0.15 /spl mu/m was also established. These technologies were demonstrated and verified by application to 0.18 /spl mu/m high performance logic LSI with high performance interconnects technology.
収録刊行物
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- 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)
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1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) 146-147, 2002-11-27
IEEE