Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers
説明
The hole confinement at threshold on indium content in strain-compensated (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs SQW lasers is investigated by rate equation analysis of the lasing delay time. It is shown that the temperature insensitive threshold current in these lasers is due to complete hole confinement in HH (heavy hole) band due to larger energy difference between HH and LH (light hole) bands by the excellent strain-compensated configuration. The spontaneous recombination lifetime increases with x. A temperature insensitive lifetime (8.5 ns) is observed between 20 and 8/spl deg/C for x=0.3.
収録刊行物
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- Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) 119-120, 2002-11-08
IEEE