Characterization of lattice mosaic of<i>a</i>-plane GaN grown on<i>r</i>-plane sapphire by metalorganic vapor-phase epitaxy
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<jats:title>Abstract</jats:title><jats:p>Nonpolar<jats:italic>a</jats:italic>-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The<jats:italic>a</jats:italic>-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (<jats:italic>c</jats:italic>-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (<jats:italic>m</jats:italic>-mosaic). The mosaic along both azimuths decreased and the<jats:italic>c</jats:italic>-mosaic/<jats:italic>m</jats:italic>-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in the<jats:italic>a</jats:italic>-plane GaN tilt mosaic measured by XRC.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 892 2005-01-01
Springer Science and Business Media LLC