Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices

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<jats:title>Abstract</jats:title><jats:p>GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 743 2002-01-01

    Springer Science and Business Media LLC

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