New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers
説明
For the first time, a novel CMOSFET structure in substrate strained-Si of lang100rang-channel on rotated wafers is presented. Low Ge concentration (10%) of SiGe layer is used in order to suppress the Vth shift and the mobility reduction caused by high channel doping. We applied Si selective epitaxial growth on recessed S/D region in SiGe layer, which is effective to induce high tensile stress and reduce S/D resistance. In strained Si NMOS, 15% performance improvement is achieved. Moreover, additive stress by using tensile CESL can further improve the drive current. In strained Si PMOS, 25% performance improvement is achieved in both narrow and wide channel device
収録刊行物
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- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. 501-504, 2006-04-07
IEEE