Highly uniform heteroepitaxy of cobalt silicide by using Co-Ti alloy for sub-quarter micron devices
説明
A new technology of cobalt SALICIDE (Self-ALIgned siliCIDE) process using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi/sub 2/ films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful for realizing deep sub-quarter micron devices.
収録刊行物
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- 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)
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1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) 188-189, 2002-11-27
IEEE