Synthesis of High-K Titanium Oxide Thin Films Formed by Metalorganic Decomposition
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<jats:title>Abstract</jats:title><jats:p>Titanium oxide (TiO<jats:sub>2</jats:sub>) thin ftlms were formed on a Si substrate by metalorganic decomposition(MOD) at temperatures ranging from 600 to 1100°C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600°C to a crystalline structure with anatase as its main component. During crystallization, a reaction between TiO<jats:sub>2</jats:sub> and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO<jats:sub>2</jats:sub> layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700°C. For the crystallized TiO<jats:sub>2</jats:sub> films, the interface trap density was 1 × 10<jats:sup>11</jats:sup> cm<jats:sup>−2</jats:sup> eV<jats:sup>−1</jats:sup>, and the leakage current was 1 × 10<jats:sup>−8</jats:sup> A/cm<jats:sup>2</jats:sup> at 0.2 MV/cm. The modified structure of TiO<jats:sub>2</jats:sub>/SiO<jats:sub>2</jats:sub>/Si is expected to be suitable for the dielectric layer in an integrated circuit in place of conventional SiO<jats:sub>2</jats:sub> films.</jats:p>
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- MRS Proceedings
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MRS Proceedings 606 1999-01-01
Springer Science and Business Media LLC