Aluminum layer formation on aluminum nitride ceramic by irradiation with a TEA CO/sub 2/ laser
説明
Recently aluminum nitride (AlN) has become an important material for substrates of high power opto-electronic devices such as laser diodes due to its attractive thermo-physical properties such as high thermal conductivity, high electrical resistivity, and low thermal expansion close to that of silicon. AlN is one of the covalent bonding ceramic and sublimates at high temperature. The irradiation with the TEA CO/sub 2/ laser induces the decomposition and leaves the metallic Al layer. In the present work, the variation of morphology and electrical resistivity of the AlN surface irradiated with the TEA CO/sub 2/ laser are investigated.
収録刊行物
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- LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings
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LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings 1 308-309, 2002-11-19
IEEE