Mask enhancer technology for sub-100nm pitch random logic layout contact hole fabrication
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説明
We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply Mask Enhancer on sub-100nm pitch contact hole printing with 1.35NA ArF immersion lithography tool, and ensure that Mask Enhancer can improve MEEF at resolution limit and DOF at semi-dense and isolated pitch region. We demonstrate printing a fine 100nm pitch line of contacts and isolated simultaneously with MEEF of less than 4 by using Mask Enhancer and prove that Mask Enhancer is one of the most effective solutions for random logic layout contact hole fabrication for 28nm node and below.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 7640 76401B-, 2010-03-11
SPIE
