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Electrically Driven Photonic-Crystal Lasers on Silicon Substrates Using Direct Wafer Bonding
Description
We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.
Journal
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- CLEO: 2014
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CLEO: 2014 SW3G.2-, 2014-01-01
OSA