Cu(In,Ga)Se<sub>2</sub> Prepared from Electrodeposited CuGaSe<sub>2</sub>/CuInSe<sub>2</sub> Bilayer for Solar Cell Applications

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<jats:title>Abstract</jats:title><jats:p>We report the preparation of Cu(In,Ga)Se<jats:sub>2</jats:sub> (CIGS) thin-films using the electrodeposited (ED) CuGaSe<jats:sub>2</jats:sub> (CGS)/CuInSe<jats:sub>2</jats:sub> (CIS) bilayers. CGS/CIS bilayers were prepared on soda-lime glass /Mo substrates to realize the controlled Ga/(Ga+In) ratios and smooth layers of CIGS thin-films. It was found that the composition and morphology of CGS films was highly dependent on the composition of the bath. Crack-free and morphological CGS thin-films were obtained by the addition of supporting electrolyte and brightener. For the morphology and the crystallization of the ED-CIGS films, the best electric charges of CGS and CIS films were 1.0 C and 6.0 C respectively and the films were annealed at 600 oC for 60 min. However, the interface of the ED-CGS/CIS film had some voids and interdiffusions of Ga and In did not take place by annealing. The CIGS solar cell using ED-CGS/CIS films as an absorber exhibited diode behavior.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 1012 2007-01-01

    Springer Science and Business Media LLC

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