Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

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<jats:title>Abstract</jats:title><jats:p>The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 997 2007-01-01

    Springer Science and Business Media LLC

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