Sensitive detection of holes generated by impact ionization in silicon
説明
Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of impact ionization and of high-energy charged particles in semiconductors.
収録刊行物
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- 2017 Silicon Nanoelectronics Workshop (SNW)
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2017 Silicon Nanoelectronics Workshop (SNW) 29-30, 2017-06-01
IEEE