Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications

DOI

Description

This paper reports on emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for sensing applications. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.

Journal

Details 詳細情報について

Report a problem

Back to top