Sub-micron thick high sensitive piezoresistive cantilevers by boron etch stop and argon implantation
説明
A new method far improving piezoresistive response of thin (<1 /spl mu/m) cantilevers with Argon implantation is described. Argon implantation is used to damage atomic structure of one side of the cantilever. Test cantilevers have thickness of less than 500 nm while length and width is 60 /spl mu/m and 30 /spl mu/m respectively. For a total implanted dose of 35 /spl times/ 10/sup 15/ ions/cm/sup 2/ maximum displacement sensitivity obtained is 8.24 /spl times/ 10/sup -7/ [1//spl Aring/] which is 82% of the theoretical maximum. Force sensitivity is found to be 3.5 /spl times/ 10/sup -3/ [1//spl mu/N].
収録刊行物
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- The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE
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The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE 494-497, 2003-10-08
IEEE