Decomposition of trisdimethylaminoarsenic and As nucleation on GaAs(001)-2×4 at low temperature
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説明
<jats:p>Adsorption and decomposition of trisdimethylaminoarsenic (TDMAAs) on a GaAs(001)-2×4 surface have been studied in the temperature range from 100 to 500 K by high-resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy (STM). TDMAAs is adsorbed molecularly on the surface at 100 K. Decomposition starts at about 300 K and vibration peaks of HREELS spectra due to adsorbates almost disappear between 400 and 500 K. STM images indicate that TDMAAs is adsorbed on As dimers of the GaAs(001)-2×4 surface. Only As atoms and clusters remain at the edge of the As dimer rows and nucleation of As starts at about 470 K. Decomposition of TDMAAs and As nucleation at relatively low temperature are advantageous as a source molecule in metalorganic chemical vapor deposition for nanofabrication.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 81 132-134, 2002-07-01
AIP Publishing
