Subnano-scale selective etching and nano-scale pore array formation on inp [001] surfaces by a wet electrochemical process
説明
Applicability of the wet electrochemical process to selective etching and nano-pore formation on n-InP (001) surfaces were investigated. The d.c. photo-anodic etching and the pulsed-avalanche etching in a IM HCl solution were found to be highly controllable and produce uniform and clean surfaces. In particular, the pulsed avalanche etching realized an extremely high etch depth controllability of 3×10 -5 nm/pulse. On the other hand, ⟨001⟩-oriented nanometer-sized straight pore arrays were successfully formed by the photo-anodization. The pore arrays exhibited intense and red-shifted PL emissions, which were probably due to a set of well defined surface states formed on the pore walls
収録刊行物
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- Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) 503-506, 2003-01-20
IEEE