Deposition of a-SiNx Films by ArF Laser Induced CVD as Diagnosed by Optical Emission Spectroscopy
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説明
<jats:title>Abstract</jats:title><jats:p>Deposition of SiNx films by ArF laser induced chemical vapor deposition has been investigated. The films exhibit excellent electrical properties; the high breakdown voltage and the low fixed charge are the same as in films deposited by LPCVD, but the BHF etching rate of them is larger by a factor about 4 than that prepared by the plasma CVD. The diffusion length of the radicals contributing to the deposition was estimated from the distribution of the deposition rate as a function of the deposition parameters. The optical emission from the radicals produced by ArF laser irradiation was also studied. Using these results, we discuss the mechanism of the deposition.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 95 1987-01-01
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