Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology

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ABSTRACT Conduction -band effective masses in a direction parallel to the quantum well plane were investigated in n -type- modulation -doped InGaAs /InAlAs multi -quantum well system. Thicknesses of well and barrier were 5 and 10 nm.Three highly -doped specimens having about 1 x 1012 cm-2 per one quantum well were prepared by MBE. Double-crystal X -ray diffraction was used to check the crystal quality. Heavy electron effective masses. almost 50 %- bigger than the band edge mass of 0.041m0, were measured by far -infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. \'onparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two- dimensional subband structure was quite different from conduction band in a directionperpendicular to the same quantum well and from that of GaAs /GaAIAs quantum well system.Keywords: infrared, far infrared, cyclotron resonance, effective mass, quantum well 1. INTRODUCTION As one of optoelectronic materials, InGaAs is widely used for 1.5- micron -band lasers and photodetectors. Electroni-cally, square potential wells confining electrons and holes in an InGaAs layer can be formed in In,Ga1 _TAs /InyAll _,BAsmulti- quantum wells (MQWs). When x =0.53 and y =0.52, those materials can be lattice- matched to the wafer sub-

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